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|Microstructure and secondary phases in coevaporated CuInS2 films: Dependence on growth temperature and chemical composition
|Álvarez García, Jacobo
Pérez Rodríguez, Alejandro
Romano Rodríguez, Albert
Morante i Lleonart, Joan Ramon
Calvo Barrio, Lorenzo
|American Institute of Physics
|The microstructure of CuInS2-(CIS2) polycrystalline films deposited onto Mo-coated glass has been analyzed by Raman scattering, Auger electron spectroscopy (AES), transmission electron microscopy, and x-ray diffraction techniques. Samples were obtained by a coevaporation procedure that allows different Cu-to-In composition ratios (from Cu-rich to Cu-poor films). Films were grown at different temperatures between 370 and 520-°C. The combination of micro-Raman and AES techniques onto Ar+-sputtered samples has allowed us to identify the main secondary phases from Cu-poor films such as CuIn5S8 (at the central region of the layer) and MoS2 (at the CIS2/Mo interface). For Cu-rich films, secondary phases are CuS at the surface of as-grown layers and MoS2 at the CIS2/Mo interface. The lower intensity of the MoS2 modes from the Raman spectra measured at these samples suggests excess Cu to inhibit MoS2 interface formation. Decreasing the temperature of deposition to 420-°C leads to an inhibition in observing these secondary phases. This inhibition is also accompanied by a significant broadening and blueshift of the main A1 Raman mode from CIS2, as well as by an increase in the contribution of an additional mode at about 305 cm-1. The experimental data suggest that these effects are related to a decrease in structural quality of the CIS2 films obtained under low-temperature deposition conditions, which are likely connected to the inhibition in the measured spectra of secondary-phase vibrational modes.
|Reproducció del document publicat a: http://dx.doi.org/10.1116/1.1329123
|It is part of:
|Journal of Vacuum Science Technology A-Vacuum Surfaces and Films, 2001, vol. 19, núm. 1, p. 232-239
|Appears in Collections:
|Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
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