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Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/32224
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dc.contributor.authorAlay, Josep Lluís-
dc.contributor.authorHirose, M.-
dc.date.accessioned2012-10-08T13:06:35Z-
dc.date.available2012-10-08T13:06:35Z-
dc.date.issued1997-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/2445/32224-
dc.description.abstractHigh resolution x-ray photoelectron spectroscopy has been used to determine the valence band alignment at ultrathin SiO2/Si interfaces. In the oxide thickness range 1.6-4.4 nm the constant band-offset values of 4.49 and 4.43 eV have been obtained for the dry SiO2/Si(100) and the wet SiO2/Si(100) interfaces, respectively. The valence band alignment of dry SiO2/Si(111) (4.36 eV) is slightly smaller than the case of the dry SiO2/Si(100) interface.-
dc.format.extent3 p.-
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherAmerican Institute of Physics-
dc.relation.isformatofReproducció del document publicat a: http://dx.doi.org/10.1063/1.363895-
dc.relation.ispartofJournal of Applied Physics, 1997, vol. 81, num. 3, p. 1606-1608-
dc.relation.urihttp://dx.doi.org/10.1063/1.363895-
dc.rights(c) American Institute of Physics , 1997-
dc.sourceArticles publicats en revistes (Història i Arqueologia)-
dc.subject.classificationSemiconductors-
dc.subject.classificationInterfícies (Ciències físiques)-
dc.subject.otherSemiconductors-
dc.subject.otherInterfaces (Physical sciences)-
dc.titleThe valence band alignment at ultrathin SiO2/Si interfaceseng
dc.typeinfo:eu-repo/semantics/article-
dc.typeinfo:eu-repo/semantics/publishedVersion-
dc.identifier.idgrec567525-
dc.date.updated2012-10-08T13:06:35Z-
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess-
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