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http://hdl.handle.net/2445/32230| Title: | Spectroscopic ellipsometry study of the In1-x Gax Asy P1-y / InP Heterojunctions grown by metalorganic chemical-vapor deposition |
| Author: | Drévillon, B. Bertrán Serra, Enric Alnot, P. Olivier, J. Razeghi, M. |
| Keywords: | Pel·lícules fines El·lipsometria Thin films Ellipsometry |
| Issue Date: | 1986 |
| Publisher: | American Institute of Physics |
| Abstract: | The dielectric functions of InP, In0.53Ga0.47As, and In0.75Ga0.25As0.5P0.5 epitaxial layers have been measured using a polarization modulation spectroscopic ellipsometer in the 1.5 to 5.3 eV region. The oxide removal procedure has been carefully checked by comparing spectroscopic ellipsometry and x ray photoelectron spectroscopy measurements. These reference data have been used to investigate the structural nature of metalorganic chemical vapor deposition grown In0.53Ga0.47As/InP and In0.75Ga0.25As0.5P0.5/InP heterojunctions, currently used for photodiodes and laser diodes. The sharpness of the interfaces has been systematically compared for the two types of heterojunctions: In1 xGaxAsy/InP and InP/In1 xGaxAsyP1 y. The sharpest interface is obtained for InP growth on In0.75Ga0.25As0.5P0.5 where the interface region is estimated to be (10±10) Å thick. The importance of performing in situ SE measurements is emphasized. |
| Note: | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.337603 |
| It is part of: | Journal of Applied Physics, 1986, vol. 60, num. 10, p. 3512-3518 |
| URI: | http://hdl.handle.net/2445/32230 |
| Related resource: | http://dx.doi.org/10.1063/1.337603 |
| ISSN: | 0021-8979 |
| Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
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