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http://hdl.handle.net/2445/33761| Title: | Large Magnetoresistance in Fe/MgO/FeCo(001) Epitaxial Tunnel-Junctions on GaAs(001). |
| Author: | Bowen, M. Cros, V. Petroff, F. Fert, Albert, 1938- Martínez Boubeta, José Carlos Costa Krämer, José Luis Anguita, José Virgilio Cebollada, Alfonso Briones Fernández-Pola, Fernando Teresa, J. M. de Morellon, L. Ibarra, M. R. Güell Vilà, Frank Peiró Martínez, Francisca Cornet i Calveras, Albert |
| Keywords: | Magnetoresistència Dispositius de memòria d'ordinador Microelectrònica Efecte túnel Ferro Magnetoresistance Computer storage devices Microelectronics Tunneling (Physics) Iron |
| Issue Date: | 2001 |
| Publisher: | American Institute of Physics |
| Abstract: | We present tunneling experiments on Fe~001!/MgO~20 Å!/FeCo~001! single-crystal epitaxial junctions of high quality grown by sputtering and laser ablation. Tunnel magnetoresistance measurements give 60% at 30 K, to be compared with 13% obtained recently on ~001!-oriented Fe/amorphous-Al2O3 /FeCo tunnel junctions. This difference demonstrates that the spin polarization of tunneling electrons is not directly related to the density of states of the free metal surface Fe~001! in this case but depends on the actual electronic structure of the entire electrode/barrier system. |
| Note: | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.1404125 |
| It is part of: | Applied Physics Letters, 2001, vol. 79, num. 11, p. 1655-1657 |
| URI: | http://hdl.handle.net/2445/33761 |
| Related resource: | http://dx.doi.org/10.1063/1.1404125 |
| ISSN: | 0003-6951 |
| Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
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|---|---|---|---|---|
| 543127.pdf | 144.37 kB | Adobe PDF | View/Open |
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