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DC Field | Value | Language |
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dc.contributor.author | Ramírez Ramírez, Joan Manel | - |
dc.contributor.author | Berencén Ramírez, Yonder Antonio | - |
dc.contributor.author | Ferrarese Lupi, Federico | - |
dc.contributor.author | Navarro Urrios, Daniel | - |
dc.contributor.author | Anopchenko, Aleksei | - |
dc.contributor.author | Tengattini, Andrea | - |
dc.contributor.author | Prtljaga, Nikola | - |
dc.contributor.author | Pavesi, Lorenzo | - |
dc.contributor.author | Rivallin, P. | - |
dc.contributor.author | Fedeli, Jean-Marc | - |
dc.contributor.author | Garrido Fernández, Blas | - |
dc.date.accessioned | 2013-07-12T08:24:39Z | - |
dc.date.available | 2013-07-12T08:24:39Z | - |
dc.date.issued | 2012-12-17 | - |
dc.identifier.issn | 1094-4087 | - |
dc.identifier.uri | http://hdl.handle.net/2445/44746 | - |
dc.description.abstract | Electrically driven Er3+ doped Si slot waveguides emitting at 1530 nm are demonstrated. Two different Er3+ doped active layers were fabricated in the slot region: a pure SiO2 and a Si-rich oxide. Pulsed polarization driving of the waveguides was used to characterize the time response of the electroluminescence (EL) and of the signal probe transmission in 1 mm long waveguides. Injected carrier absorption losses modulate the EL signal and, since the carrier lifetime is much smaller than that of Er3+ ions, a sharp EL peak was observed when the polarization was switched off. A time-resolved electrical pump & probe measurement in combination with lock-in amplifier techniques allowed to quantify the injected carrier absorption losses. We found an extinction ratio of 6 dB, passive propagation losses of about 4 dB/mm, and a spectral bandwidth > 25 nm at an effective d.c. power consumption of 120 μW. All these performances suggest the usage of these devices as electro-optical modulators. | - |
dc.format.extent | 11 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | Optical Society of America | - |
dc.relation | info:eu-repo/semantics/altIdentifier/doi/10.1364/OE.20.028808 | - |
dc.relation.isformatof | Reproducció del document publicat a: http://dx.doi.org/10.1364/OE.20.028808 | - |
dc.relation.ispartof | Optics Express, 2012, vol. 20 , num. 27, p. 28808-28818 | - |
dc.relation.uri | http://dx.doi.org/10.1364/OE.20.028808 | - |
dc.rights | (c) Optical Society of America, 2012 | - |
dc.source | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | - |
dc.subject.classification | Optoelectrònica | - |
dc.subject.classification | Enginyeria elèctrica | - |
dc.subject.other | Optoelectronics | - |
dc.subject.other | Electric engineering | - |
dc.title | Electrical pump & probe and injected carrier losses quantification in Er doped Si slot waveguides | - |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/publishedVersion | - |
dc.identifier.idgrec | 620779 | - |
dc.date.updated | 2013-07-12T08:24:40Z | - |
dc.relation.projectID | info:eu-repo/grantAgreement/EC/FP7/224312/EU//HELIOS | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
dc.identifier.pmid | 23263121 | - |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) Publicacions de projectes de recerca finançats per la UE |
Files in This Item:
File | Description | Size | Format | |
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620779.pdf | 1.49 MB | Adobe PDF | View/Open |
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