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Title: | Electrical pump & probe and injected carrier losses quantification in Er doped Si slot waveguides |
Author: | Ramírez Ramírez, Joan Manel Berencén Ramírez, Yonder Antonio Ferrarese Lupi, Federico Navarro Urrios, Daniel Anopchenko, Aleksei Tengattini, Andrea Prtljaga, Nikola Pavesi, Lorenzo Rivallin, P. Fedeli, Jean-Marc Garrido Fernández, Blas |
Keywords: | Optoelectrònica Enginyeria elèctrica Optoelectronics Electric engineering |
Issue Date: | 17-Dec-2012 |
Publisher: | Optical Society of America |
Abstract: | Electrically driven Er3+ doped Si slot waveguides emitting at 1530 nm are demonstrated. Two different Er3+ doped active layers were fabricated in the slot region: a pure SiO2 and a Si-rich oxide. Pulsed polarization driving of the waveguides was used to characterize the time response of the electroluminescence (EL) and of the signal probe transmission in 1 mm long waveguides. Injected carrier absorption losses modulate the EL signal and, since the carrier lifetime is much smaller than that of Er3+ ions, a sharp EL peak was observed when the polarization was switched off. A time-resolved electrical pump & probe measurement in combination with lock-in amplifier techniques allowed to quantify the injected carrier absorption losses. We found an extinction ratio of 6 dB, passive propagation losses of about 4 dB/mm, and a spectral bandwidth > 25 nm at an effective d.c. power consumption of 120 μW. All these performances suggest the usage of these devices as electro-optical modulators. |
Note: | Reproducció del document publicat a: http://dx.doi.org/10.1364/OE.20.028808 |
It is part of: | Optics Express, 2012, vol. 20 , num. 27, p. 28808-28818 |
URI: | http://hdl.handle.net/2445/44746 |
Related resource: | http://dx.doi.org/10.1364/OE.20.028808 |
ISSN: | 1094-4087 |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) Publicacions de projectes de recerca finançats per la UE |
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