Please use this identifier to cite or link to this item:
http://hdl.handle.net/2445/47298
Title: | Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate |
Author: | Fonrodona Turon, Marta Soler Vilamitjana, David Escarré i Palou, Jordi Villar, Fernando Bertomeu i Balagueró, Joan Andreu i Batallé, Jordi Saboundji, A. Coulon, N. Mohammed-Brahim, T. |
Keywords: | Transistors Pel·lícules fines Silici Nanocristalls Deposició química en fase vapor Transistors Thin films Silicon Nanocrystals Chemical vapor deposition |
Issue Date: | 2006 |
Publisher: | Elsevier B.V. |
Abstract: | Amorphous and nanocrystalline silicon films obtained by Hot-Wire Chemical Vapor Deposition have been incorporated as active layers in n-type coplanar top gate thin film transistors deposited on glass substrates covered with SiO 2. Amorphous silicon devices exhibited mobility values of 1.3 cm 2 V - 1 s - 1, which are very high taking into account the amorphous nature of the material. Nanocrystalline transistors presented mobility values as high as 11.5 cm 2 V - 1 s - 1 and resulted in low threshold voltage shift (∼ 0.5 V). |
Note: | Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.tsf.2005.07.217 |
It is part of: | Thin Solid Films, 2006, vol. 501, num. 1-2, p. 303-306 |
URI: | http://hdl.handle.net/2445/47298 |
Related resource: | http://dx.doi.org/10.1016/j.tsf.2005.07.217 |
ISSN: | 0040-6090 |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
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525191.pdf | 175.94 kB | Adobe PDF | View/Open |
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