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https://hdl.handle.net/2445/47381| Title: | Microcrystalline silicon thin film transistors obtained by Hot-Wire CVD |
| Author: | Puigdollers i González, Joaquim Orpella, Albert Alcubilla González, Ramón Dosev, D. Pallarés Curto, Jordi Peiró, D. Voz Sánchez, Cristóbal Bertomeu i Balagueró, Joan Andreu i Batallé, Jordi Marsal Garví, Lluís F. (Lluís Francesc) |
| Keywords: | Silici Pel·lícules fines Microelectrònica Deposició química en fase vapor Transistors Semiconductors Cèl·lules solars Silicon Thin films Microelectronics Chemical vapor deposition Transistors Semiconductors Solar cells |
| Issue Date: | 2000 |
| Publisher: | Elsevier B.V. |
| Abstract: | Polysilicon thin film transistors (TFT) are of great interest in the field of large area microelectronics, especially because of their application as active elements in flat panel displays. Different deposition techniques are in tough competition with the objective to obtain device-quality polysilicon thin films at low temperature. In this paper we present the preliminary results obtained with the fabrication of TFT deposited by hot-wire chemical vapor deposition (HWCVD). Some results concerned with the structural characterization of the material and electrical performance of the device are presented. |
| Note: | Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0921-5107(99)00252-4 |
| It is part of: | Materials Science and Engineering B-Solid State Materials for Advanced Technology, 2000, vol. 69-70, p. 526-529 |
| URI: | https://hdl.handle.net/2445/47381 |
| Related resource: | http://dx.doi.org/10.1016/S0921-5107(99)00252-4 |
| ISSN: | 0921-5107 |
| Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
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| 147812.pdf | 88.64 kB | Adobe PDF | View/Open |
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