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| Issue Date | Title | Author(s) |
|---|---|---|
| Nov-1991 | Nucleation of diamond on silicon, SiAlON, and graphite substrates coated with an a-C:H layer | Dubray, J. J.; Pantano, C. G.; Meloncelli, M.; Bertrán Serra, Enric |
| 1993 | Structure of a-Si:H/a-Si1-xCx:H multilayers deposited in a reactor with automated substrate holder | Bertomeu i Balagueró, Joan; Asensi López, José Miguel; Puigdollers i González, Joaquim; Andreu i Batallé, Jordi; Morenza Gil, José Luis |
| 1999 | Investigation of defect formation and electronic transport in microcrystalline silicon deposited by hot-wire CVD | Stöger, M.; Breymesser, A.; Schlosser, V.; Ramadori, M.; Plunger, V.; Peiró, D.; Voz Sánchez, Cristóbal; Bertomeu i Balagueró, Joan; Nelhiebel, M.; Schattschneider, P.; Andreu i Batallé, Jordi |
| 1991 | Ellipsometric study of a-Si:H thin films deposited by square wave modulated rf glow discharge | Lloret, A.; Bertrán Serra, Enric; Andújar Bella, José Luis; Canillas i Biosca, Adolf; Morenza Gil, José Luis |
| 1990 | In situ spectroellipsometric study of the nucleation and growth of amorphous silicon | Canillas i Biosca, Adolf; Bertrán Serra, Enric; Andújar Bella, José Luis; Drévillon, B. |
| 1992 | Properties of amorphous silicon thin films grown in square wave modulated silane rf discharges. | Andújar Bella, José Luis; Bertrán Serra, Enric; Canillas i Biosca, Adolf; Campmany i Guillot, Josep, 1966-; Serra-Miralles, J.; Roch i Cunill, Carles; Lloret, A. |
| 1991 | Effect of substrate temperature on deposition rate of rf plasma-deposited hydrogenated amorphous silicon thin films | Andújar Bella, José Luis; Bertrán Serra, Enric; Canillas i Biosca, Adolf; Campmany i Guillot, Josep, 1966-; Morenza Gil, José Luis |
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