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http://hdl.handle.net/2445/98451| Title: | Hydrogen related effects in a-Si:H studied by photothermal deflection spectroscopy |
| Author: | Serra-Miralles, J. Andreu i Batallé, Jordi Sardin, Georges Roch i Cunill, Carles Asensi López, José Miguel Bertomeu i Balagueró, Joan Esteve Pujol, Joan |
| Keywords: | Espectroscòpia Silici Física de l'estat sòlid Semiconductors Spectrum analysis Silicon Solid state physics Semiconductors |
| Issue Date: | 1991 |
| Publisher: | Elsevier B.V. |
| Abstract: | A study of thermal annealing of a-Si:H samples between 300 and 600°C has been carried out. At increasing annealing temperatures, the sub-gap absorption measured by PDS increases showing two inflections, centered at 375 and 550°C. The hydrogen content measured by thermal desorption spectroscopy evolves in the same temperature range, whereas the evolution of the hydrogen content deduced from the IR transmission spectra differs, decreasing sooner and vanishing already at about 450°C. |
| Note: | Versió postprint del document publicat a: http://dx.doi.org/10.1016/0921-4526(91)90136-3 |
| It is part of: | Physica B, 1991, vol. 170, num. 1-4, p. 269-272 |
| URI: | http://hdl.handle.net/2445/98451 |
| Related resource: | http://dx.doi.org/10.1016/0921-4526(91)90136-3 |
| ISSN: | 0921-4526 |
| Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 060261.pdf | 3.9 MB | Adobe PDF | View/Open |
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