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Título: | Equilibrium and nonequilibrium gap-state distribution in amorphous silicon |
Autor: | Asensi López, José Miguel Andreu i Batallé, Jordi |
Materia: | Conductivitat elèctrica Propietats tèrmiques Semiconductors amorfs Electric conductivity Thermal properties Amorphous semiconductors |
Fecha de publicación: | 1993 |
Publicado por: | The American Physical Society |
Resumen: | A general and straightforward analytical expression for the defect-state-energy distribution of a-Si:H is obtained through a statistical-mechanical treatment of the hydrogen occupation for different sites. Broadening of available defect energy levels (defect pool) and their charge state, both in electronic equilibrium and nonequilibrium steady-state situations, are considered. The model gives quantitative results that reproduce different defect phenomena, such as the thermally activated spin density, the gap-state dependence on the Fermi level, and the intensity and temperature dependence of light-induced spin density. An interpretation of the Staebler-Wronski effect is proposed, based on the ''conversion'' of shallow charged centers to neutrals near the middle of the gap as a consequence of hydrogen redistribution. |
Nota: | Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.47.13295 |
Es parte de: | Physical Review B, 1993, vol. 47, núm. 20, p. 13295-13303. |
URI: | https://hdl.handle.net/2445/9851 |
Recurso relacionado: | http://dx.doi.org/10.1103/PhysRevB.47.13295 |
ISSN: | 0163-1829 |
Aparece en las colecciones: | Articles publicats en revistes (Física Aplicada) |
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