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https://hdl.handle.net/2445/9851
Title: | Equilibrium and nonequilibrium gap-state distribution in amorphous silicon |
Author: | Asensi López, José Miguel Andreu i Batallé, Jordi |
Keywords: | Conductivitat elèctrica Propietats tèrmiques Semiconductors amorfs Electric conductivity Thermal properties Amorphous semiconductors |
Issue Date: | 1993 |
Publisher: | The American Physical Society |
Abstract: | A general and straightforward analytical expression for the defect-state-energy distribution of a-Si:H is obtained through a statistical-mechanical treatment of the hydrogen occupation for different sites. Broadening of available defect energy levels (defect pool) and their charge state, both in electronic equilibrium and nonequilibrium steady-state situations, are considered. The model gives quantitative results that reproduce different defect phenomena, such as the thermally activated spin density, the gap-state dependence on the Fermi level, and the intensity and temperature dependence of light-induced spin density. An interpretation of the Staebler-Wronski effect is proposed, based on the ''conversion'' of shallow charged centers to neutrals near the middle of the gap as a consequence of hydrogen redistribution. |
Note: | Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.47.13295 |
It is part of: | Physical Review B, 1993, vol. 47, núm. 20, p. 13295-13303. |
URI: | https://hdl.handle.net/2445/9851 |
Related resource: | http://dx.doi.org/10.1103/PhysRevB.47.13295 |
ISSN: | 0163-1829 |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
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