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Title: | Crystal growth characterization of polycrystalline silicon films obtained by hot-wire chemical vapour deposition |
Author: | Polo Trasancos, Ma. del Carmen Peiró Martínez, Francisca Cifre, J. Bertomeu i Balagueró, Joan Puigdollers i González, Joaquim Andreu i Batallé, Jordi |
Keywords: | Silici Deposició química en fase vapor Pel·lícules fines Creixement cristal·lí Silicon Chemical vapor deposition Thin films Crystal growth |
Issue Date: | 1995 |
Publisher: | Institute of Physics (IOP) |
Abstract: | Polycrystalline silicon (poly-Si) films were obtained at moderate temperatures (280-500ºC) from a mixture of silane and hydrogen in a hot wire CVD reactor. SEM and TEM results revealed a columnar growth of poly-Si grains with a preferential orientation of the crystals perpendicular to the substrate along the [110] direction. Plain view examinations along the [110] axis revealed a needled shape of the crystals 0.3-1 µm) with the largest axis randomly distributed on the plane. The high quality of the polycrystalline samples obtained makes the hot-wire technique very promising. |
Note: | Reproducció del document publicat a: http://iopscience.iop.org/journal/1742-6596 |
It is part of: | Institute of Physics Conference Series, 1995, vol. 146, p. 503-506 |
URI: | http://hdl.handle.net/2445/99362 |
ISSN: | 0951-3248 |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
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