Please use this identifier to cite or link to this item:
https://hdl.handle.net/2445/9945
Title: | Determination of the electron density in GaAs/AlxGa1-xAs heterostructures |
Author: | Martorell Domenech, Juan Sprung, Donald W. L. |
Keywords: | Electrònica quàntica Física de l'estat sòlid Quantum electronics Solid state physics |
Issue Date: | 1994 |
Publisher: | The American Physical Society |
Abstract: | An optimized self-consistent method for determination of the quantal electron density is presented. It is applied, in the zero-temperature case, to devices with either partial or full donor ionization. A Thomas-Fermi approximation for the T=0 limit is developed and shown to be appropriate for systematic studies of the two-dimensional electron density, σ − . A suitable linear approximation is found that provides simple and accurate analytic expressions for σ − in terms of the physical parameters of the device. |
Note: | Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.49.13750 |
It is part of: | Physical Review B, 1994, vol. 49, núm. 19, p. 13750-13759. |
URI: | https://hdl.handle.net/2445/9945 |
Related resource: | http://dx.doi.org/10.1103/PhysRevB.49.13750 |
ISSN: | 0163-1829 |
Appears in Collections: | Articles publicats en revistes (Física Quàntica i Astrofísica) |
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