Browsing by Author Svensson, Bengt G.
Showing results 1 to 3 of 3
| Issue Date | Title | Author(s) |
|---|---|---|
| 2001 | Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon | Pellegrino, Paolo; Leveque, P.; Hallen, A.; Lalita, J.; Jagadish, C. (Chennupati); Svensson, Bengt G. |
| 1-Aug-1998 | Electrically active point defects in n-type 4H¿SiC | Doyle, J. P.; Linnarsson, M. K.; Pellegrino, Paolo; Keskitalo, N.; Svensson, Bengt G.; Schoner, A.; Nordell, N.; Lindstrom, J. L. |
| 15-Jan-2003 | Vacancy and interstitial depth profiles in ion-implanted silicon | Leveque, P.; Kortegaard Nielsen, H.; Pellegrino, Paolo; Hallen, A.; Svensson, Bengt G.; Kuznetsov, Andrej; Wong-Leung, J.; Jagadish, C. (Chennupati); Privitera, V. |