Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/10599
Title: Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon
Author: Pellegrino, Paolo
Leveque, P.
Hallen, A.
Lalita, J.
Jagadish, C.(Chennupati)
Svensson, Bengt G.
Keywords: Microelectrònica
Dispositius magnètics
Microelectronics
Magnetic devices
Issue Date: 2001
Publisher: The American Physical Society
Note: Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.64.195211
It is part of: Physical Review B, 2001, vol. 64, núm. 19, p. 195211-195221
URI: http://hdl.handle.net/2445/10599
ISSN: 0163-1829
Appears in Collections:Articles publicats en revistes (Electrònica)

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