Please use this identifier to cite or link to this item:
Title: Electronic transport in QD based structures: from basic parameters to opto-electronic device simulations
Author: Illera Robles, Sergio
Prades García, Juan Daniel
Cirera Hernández, Albert
Cornet i Calveras, Albert
Keywords: Optoelectrònica
Issue Date: 2015
Publisher: Institute of Physics (IOP)
Abstract: We present a theoretical model that explains the optoelectronic response of nanodevices based on large quantum dot (QD) arrays. The model is grounded on rate equations in the self-consistent field regime and it accurately describes the most important part of the system: the tunnel junctions. We demonstrate that the ratio between the optical terms and the transport rates determines the final device response. Furthermore, we showed that to obtain a net photocurrent the QD has to be asymmetrically coupled to the leads.
Note: Reproducció del document publicat a:
It is part of: Journal of Physics: Conference Series, 2015, vol. 609, num. 012002
Related resource:
ISSN: 1742-6588
Appears in Collections:Articles publicats en revistes (Electrònica)
Articles publicats en revistes (Institut de Nanociència i Nanotecnologia (IN2UB))

Files in This Item:
File Description SizeFormat 
653370.pdf1.06 MBAdobe PDFView/Open

This item is licensed under a Creative Commons License Creative Commons