Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/13171
Title: Electric-field control of exchange bias in multiferroic epitaxial heterostructures
Author: Laukhin, Vladimir
Skumryev, Vassil Hristov
Martí, X.
Hrabovsky, D.
Sánchez Barrera, Florencio
García-Cuenca Varona, María Victoria
Ferrater Martorell, Cèsar
Varela Fernández, Manuel, 1956-
Lüders, R.
Bobo, J. F.
Fontcuberta i Griñó, Josep
Keywords: Electrònica quàntica
Semiconductors
Microelectrònica
Qunatum electronics
Semiconductors
Microelectronics
Issue Date: 2006
Publisher: American Physical Society
Abstract: The magnetic exchange between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the FM layer to the magnetic state of the antiferromagnetic one. We will show that biasing the ferroelectric YMnO3 layer by an electric field allows control of the magnetic exchange bias and subsequently the magnetotransport properties of the FM layer. This finding may contribute to paving the way towards a new generation of electric-field controlled spintronic devices.
Note: Reproducció digital del document proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevLett.97.227201
It is part of: Physical Review Letters, 2006, vol. 97, núm. 22, p. 227201-1-227201-4
URI: http://hdl.handle.net/2445/13171
ISSN: 0031-9007
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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