Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/15725
Title: Efficiency and reliability enhancement of silicon nanocrystal field-effect luminescence from nitride-oxide gate stacks
Author: Perálvarez Barrera, Mariano José
Carreras, Josep
Barreto, Jorge
Morales, A. (Ángel)
Domínguez, Carlos (Domínguez Horna)
Garrido Fernández, Blas
Keywords: Microelectrònica
Semiconductors
Microelectronics
Semiconductors
Issue Date: 17-Jun-2008
Publisher: American Institute of Physics
Abstract: We report on a field-effect light emitting device based on silicon nanocrystals in silicon oxide deposited by plasma-enhanced chemical vapor deposition. The device shows high power efficiency and long lifetime. The power efficiency is enhanced up to 0.1 %25 by the presence of a silicon nitride control layer. The leakage current reduction induced by this nitride buffer effectively increases the power efficiency two orders of magnitude with regard to similarly processed devices with solely oxide. In addition, the nitride cools down the electrons that reach the polycrystalline silicon gate lowering the formation of defects, which significantly reduces the device degradation.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.2939562
It is part of: Applied Physics Letters, 2008, vol. 92, núm. 24, p. 241104-1-241104-3
Related resource: http://dx.doi.org/10.1063/1.2939562
URI: http://hdl.handle.net/2445/15725
ISSN: 1077-3118
Appears in Collections:Publicacions de projectes de recerca finançats per la UE
Articles publicats en revistes (Electrònica)

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