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http://hdl.handle.net/2445/17583
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DC Field | Value | Language |
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dc.contributor.author | Carreras, Josep | cat |
dc.contributor.author | Bonafos, Caroline | cat |
dc.contributor.author | Montserrat i Martí, Josep | cat |
dc.contributor.author | Domínguez, Carlos (Domínguez Horna) | cat |
dc.contributor.author | Albiol i Cobos, Jordi | cat |
dc.contributor.author | Garrido Fernández, Blas | cat |
dc.date.accessioned | 2011-04-12T08:15:27Z | - |
dc.date.available | 2011-04-12T08:15:27Z | - |
dc.date.issued | 2008 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | http://hdl.handle.net/2445/17583 | - |
dc.description.abstract | We describe high-speed control of light from silicon nanocrystals under electrical excitation. The nanocrystals are fabricated by the ion implantation of Si+ in the 15?nm thick gate oxide of a field effect transistor at 6.5?keV. A characteristic read-peaked electroluminescence is obtained either by DC or AC gate excitation. However, AC gate excitation is found to have a frequency response that is limited by the radiative lifetimes of silicon nanocrystals, which makes impossible the direct modulation of light beyond 100?kb?s?1 rates. As a solution, we demonstrate that combined DC gate excitation along with an AC channel hot electron injection of electrons into the nanocrystals may be used to obtain a 100% deep modulation at rates of 200?Mb?s?1 and low modulating voltages. This approach may find applications in biological sensing integrated into CMOS, single-photon emitters or direct encoding of information into light from Si-nc doped with erbium systems, which exhibit net optical gain. In this respect, the main advantage compared to conventional electro-optical modulators based on plasma dispersion effects is the low power consumption (104 times smaller) and thus the inherent large scale of integration. A detailed electrical characterization is also given. An Si/SiO2 barrier change from ?b = 3.2 to 4.2?eV is found while the injection mechanism is changed from Fowler?Nordheim to channel hot electron, which is a clear signature of nanocrystal charging and subsequent electroluminescence quenching. | - |
dc.format.extent | 17 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | eng |
dc.publisher | IOP Publishing Ltd. | eng |
dc.relation.isformatof | Versió postprint del document publicat a http://dx.doi.org/10.1088/0957-4484/19/20/205201 | cat |
dc.relation.ispartof | Nanotechnology, 2008, vol. 19, núm. 20, p. 205201-1-205201-9 | - |
dc.relation.uri | http://dx.doi.org/10.1088/0957-4484/19/20/205201 | - |
dc.rights | (c) IOP Publishing, 2009 | - |
dc.source | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | - |
dc.subject.classification | Electrònica | cat |
dc.subject.classification | Matèria condensada | cat |
dc.subject.classification | Nanocristalls semiconductors | cat |
dc.subject.other | Electronics | eng |
dc.subject.other | Condensed matter | eng |
dc.subject.other | Semiconductor nanocrystals | eng |
dc.title | Auger quenching-based modulation of electroluminescence from ion-implanted silicon nanocrystals | eng |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/acceptedVersion | - |
dc.identifier.idgrec | 585158 | - |
dc.relation.projectID | info:eu-repo/grantAgreement/EC/FP7/224312/EU//HELIOS | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) Publicacions de projectes de recerca finançats per la UE |
Files in This Item:
File | Description | Size | Format | |
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585158.pdf | 2.16 MB | Adobe PDF | View/Open |
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