Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/22079
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dc.contributor.authorGomila Lluch, Gabrielcat
dc.contributor.authorBulashenko, Olegcat
dc.contributor.authorRubí Capaceti, José Miguelcat
dc.date.accessioned2012-02-16T08:49:32Z-
dc.date.available2012-02-16T08:49:32Z-
dc.date.issued1998-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/2445/22079-
dc.description.abstractA theoretical model for the noise properties of Schottky barrier diodes in the framework of the thermionic-emission¿diffusion theory is presented. The theory incorporates both the noise induced by the diffusion of carriers through the semiconductor and the noise induced by the thermionic emission of carriers across the metal¿semiconductor interface. Closed analytical formulas are derived for the junction resistance, series resistance, and contributions to the net noise localized in different space regions of the diode, all valid in the whole range of applied biases. An additional contribution to the voltage-noise spectral density is identified, whose origin may be traced back to the cross correlation between the voltage-noise sources associated with the junction resistance and those for the series resistance. It is argued that an inclusion of the cross-correlation term as a new element in the existing equivalent circuit models of Schottky diodes could explain the discrepancies between these models and experimental measurements or Monte Carlo simulations.eng
dc.format.extent12 p.-
dc.format.mimetypeapplication/pdf-
dc.language.isoengeng
dc.publisherAmerican Institute of Physicsca
dc.relation.isformatofReproducció del document publicat a: http://dx.doi.org/10.1063/1.367024-
dc.relation.ispartofJournal of Applied Physics, 1998, vol. 83, núm. 5, p. 2619-2630-
dc.relation.urihttp://dx.doi.org/10.1063/1.367024-
dc.rightsNoiseeng
dc.rights(c) American Institute of Physics, 1998-
dc.subject.classificationSorollcat
dc.subject.classificationDíodescat
dc.subject.classificationSemiconductorscat
dc.subject.classificationMètode de Montecarlocat
dc.subject.classificationControl del sorollcat
dc.subject.classificationMicroelectrònicacat
dc.subject.otherDiodeseng
dc.subject.otherSemiconductorseng
dc.subject.otherMonte Carlo methodeng
dc.subject.otherNoise controleng
dc.subject.otherMicroelectronicseng
dc.titleLocal noise analysis of a Schottky contact: combined thermionic-emissiondiffusion theoryeng
dc.typeinfo:eu-repo/semantics/article-
dc.typeinfo:eu-repo/semantics/publishedVersion-
dc.identifier.idgrec143476-
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess-
Appears in Collections:Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
Articles publicats en revistes (Física de la Matèria Condensada)

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