Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/22099
Title: Impedance field and noise of submicrometer n+ nn+ diodes: analytical approach
Author: Bulashenko, Oleg
Gaubert, P.
Varani, L.
Vaissiere, J. C.
Nougier, J. P.
Keywords: Díodes
Soroll
Camps elèctrics
Semiconductors
Mètode de Montecarlo
Electrònica de l'estat sòlid
Microelectrònica
Diodes
Noise
Electric fields
Semiconductors
Monte Carlo method
Solid state electronics
Microelectronics
Issue Date: 2000
Publisher: American Institute of Physics
Abstract: A theoretical model for the noise properties of n+nn+ diodes in the drift-diffusion framework is presented. In contrast with previous approaches, our model incorporates both the drift and diffusive parts of the current under inhomogeneous and hot-carrier conditions. Closed analytical expressions describing the transport and noise characteristics of submicrometer n+nn+ diodes, in which the diode base (n part) and the contacts (n+ parts) are coupled in a self-consistent way, are obtained
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.1309120
It is part of: Journal of Applied Physics, 2000, vol. 88, núm. 8, p. 4709-4716
URI: http://hdl.handle.net/2445/22099
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Física de la Matèria Condensada)

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