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http://hdl.handle.net/2445/22099Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Bulashenko, Oleg | cat |
| dc.contributor.author | Gaubert, P. | cat |
| dc.contributor.author | Varani, L. | cat |
| dc.contributor.author | Vaissiere, J. C. | cat |
| dc.contributor.author | Nougier, J. P. | cat |
| dc.date.accessioned | 2012-02-16T08:49:41Z | - |
| dc.date.available | 2012-02-16T08:49:41Z | - |
| dc.date.issued | 2000 | - |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.uri | http://hdl.handle.net/2445/22099 | - |
| dc.description.abstract | A theoretical model for the noise properties of n+nn+ diodes in the drift-diffusion framework is presented. In contrast with previous approaches, our model incorporates both the drift and diffusive parts of the current under inhomogeneous and hot-carrier conditions. Closed analytical expressions describing the transport and noise characteristics of submicrometer n+nn+ diodes, in which the diode base (n part) and the contacts (n+ parts) are coupled in a self-consistent way, are obtained | eng |
| dc.format.extent | 8 p. | - |
| dc.format.mimetype | application/pdf | - |
| dc.language.iso | eng | eng |
| dc.publisher | American Institute of Physics | - |
| dc.relation.isformatof | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.1309120 | - |
| dc.relation.ispartof | Journal of Applied Physics, 2000, vol. 88, núm. 8, p. 4709-4716 | - |
| dc.relation.uri | http://dx.doi.org/10.1063/1.1309120 | - |
| dc.rights | (c) American Institute of Physics, 2000 | - |
| dc.source | Articles publicats en revistes (Física de la Matèria Condensada) | - |
| dc.subject.classification | Díodes | cat |
| dc.subject.classification | Soroll | cat |
| dc.subject.classification | Camps elèctrics | cat |
| dc.subject.classification | Semiconductors | cat |
| dc.subject.classification | Mètode de Montecarlo | cat |
| dc.subject.classification | Electrònica de l'estat sòlid | cat |
| dc.subject.classification | Microelectrònica | cat |
| dc.subject.other | Diodes | eng |
| dc.subject.other | Noise | eng |
| dc.subject.other | Electric fields | eng |
| dc.subject.other | Semiconductors | eng |
| dc.subject.other | Monte Carlo method | eng |
| dc.subject.other | Solid state electronics | eng |
| dc.subject.other | Microelectronics | eng |
| dc.title | Impedance field and noise of submicrometer n+ nn+ diodes: analytical approach | eng |
| dc.type | info:eu-repo/semantics/article | - |
| dc.type | info:eu-repo/semantics/publishedVersion | - |
| dc.identifier.idgrec | 517048 | - |
| dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
| Appears in Collections: | Articles publicats en revistes (Física de la Matèria Condensada) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 517048.pdf | 254.06 kB | Adobe PDF | View/Open |
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