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http://hdl.handle.net/2445/22099| Title: | Impedance field and noise of submicrometer n+ nn+ diodes: analytical approach |
| Author: | Bulashenko, Oleg Gaubert, P. Varani, L. Vaissiere, J. C. Nougier, J. P. |
| Keywords: | Díodes Soroll Camps elèctrics Semiconductors Mètode de Montecarlo Electrònica de l'estat sòlid Microelectrònica Diodes Noise Electric fields Semiconductors Monte Carlo method Solid state electronics Microelectronics |
| Issue Date: | 2000 |
| Publisher: | American Institute of Physics |
| Abstract: | A theoretical model for the noise properties of n+nn+ diodes in the drift-diffusion framework is presented. In contrast with previous approaches, our model incorporates both the drift and diffusive parts of the current under inhomogeneous and hot-carrier conditions. Closed analytical expressions describing the transport and noise characteristics of submicrometer n+nn+ diodes, in which the diode base (n part) and the contacts (n+ parts) are coupled in a self-consistent way, are obtained |
| Note: | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.1309120 |
| It is part of: | Journal of Applied Physics, 2000, vol. 88, núm. 8, p. 4709-4716 |
| URI: | http://hdl.handle.net/2445/22099 |
| Related resource: | http://dx.doi.org/10.1063/1.1309120 |
| ISSN: | 0021-8979 |
| Appears in Collections: | Articles publicats en revistes (Física de la Matèria Condensada) |
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|---|---|---|---|---|
| 517048.pdf | 254.06 kB | Adobe PDF | View/Open |
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