Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24723
Title: Electrical transport quantum effects in the In0.53Ga0.47As/In0.52Al0.48As heterostructure on silicon
Author: Georgakilas, Alexander
Christou, Aris
Zekentes, Konstantinos
Mercy, J. M.
Konczewic, L. K.
Vilà i Arbonès, Anna Maria
Cornet i Calveras, Albert
Keywords: Camps magnètics
Nanotecnologia
Magnetic fields
Nanotechnology
Issue Date: 1-Jul-1994
Publisher: American Institute of Physics
Abstract: Electrical transport in a modulation doped heterostructure of In0.53Ga0.47As/In0.52Al0.48As grown on Si by molecular beam epitaxy has been measured. Quantum Hall effect and Subnikov¿De Haas oscillations were observed indicating the two¿dimensional character of electron transport. A mobility of 20¿000 cm2/V¿s was measured at 6 K for an electron sheet concentration of 1.7×1012 cm¿2. Transmission electron microscopy observations indicated a significant surface roughness and high defect density of the InGaAs/InAlAs layers to be present due to the growth on silicon. In addition, fine¿scale composition modulation present in the In0.53Ga0.47As/In0.52Al0.48As may further limit transport properties.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.357652
It is part of: Journal of Applied Physics, 1994, vol. 76, num. 3, p. 1948-1950
Related resource: http://dx.doi.org/10.1063/1.357652
URI: http://hdl.handle.net/2445/24723
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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