Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24762
Title: Analysis of geometrical effects on the behavior of transverse and longitudinal modes of amorphous silicon compounds
Author: Moreno, J. A.
Garrido Fernández, Blas
Samitier i Martí, Josep
Morante i Lleonart, Joan Ramon
Keywords: Espectroscòpia
Compostos de silici
Spectrum analysis
Silicon compounds
Issue Date: 15-Feb-1997
Publisher: American Institute of Physics
Abstract: The peak frequency, width, and shape of the transverse-optical (TO) and longitudinal-optical (LO) infrared absorption modes of silicon oxides (SiO2, SiOx), silicon nitrides (Si3N4, SiNx), silicon oxynitrides (SiOxNy), and other silicon compounds have often been connected with stress, stoichiometry, defects, structural order, and other properties of the layers. However, certain geometrical effects strongly influence the spectral response of the material independent of its physical or structural properties. The influence of layer thickness, multilayer configuration, substrate effects, angles, and polarization on the behavior of TO and LO bands are presented and discussed. Some corrections are suggested to reduce experimental error and for the reliable measurement of stress, composition, disorder, and structure.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.364049
It is part of: Journal of Applied Physics, 1997, vol. 81, núm. 4, p. 1933-1942
Related resource: http://dx.doi.org/10.1063/1.364049
URI: http://hdl.handle.net/2445/24762
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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