Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24762
Title: Analysis of geometrical effects on the behavior of transverse and longitudinal modes of amorphous silicon compounds
Author: Moreno, J. A.
Garrido Fernández, Blas
Samitier i Martí, Josep
Morante i Lleonart, Joan Ramon
Keywords: Espectroscòpia
Compostos de silici
Spectrum analysis
Silicon compounds
Issue Date: 15-Feb-1997
Publisher: American Institute of Physics
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.364049
It is part of: Journal of Applied Physics, 1997, vol. 81, núm. 4, p. 1933-1942
Related resource: http://dx.doi.org/10.1063/1.364049
URI: http://hdl.handle.net/2445/24762
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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