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http://hdl.handle.net/2445/24797
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DC Field | Value | Language |
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dc.contributor.author | Diéguez Barrientos, Àngel | cat |
dc.contributor.author | Peiró Martínez, Francisca | cat |
dc.contributor.author | Cornet i Calveras, Albert | cat |
dc.contributor.author | Morante i Lleonart, Joan Ramon | cat |
dc.contributor.author | Alsina, F. | cat |
dc.contributor.author | Pascual Gainza, Jordi | cat |
dc.date.accessioned | 2012-05-03T07:32:34Z | - |
dc.date.available | 2012-05-03T07:32:34Z | - |
dc.date.issued | 1996-10-01 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/2445/24797 | - |
dc.description.abstract | We use transmission electron microscopy to characterize the morphology of InGaP epitaxial layers grown by metal‐organic vapor‐phase epitaxy over misoriented GaAs (001) substrates, with a cutoff angle in a range from 0° to 25°. The occurrence of phase separation and CuPt‐type ordered superstructures has been observed. The most ordered configuration has been found to appear in layers grown on 2° off substrates, and the strength of order decreases with increasing the misorientation angle beyond α=2°. Conversely, whereas the phase separation is less evident in the layer grown at 2°, the sample grown with a misorientation of 25° exhibits the most phase separated configuration. The completion between these two phenomena is discussed depending on the misorientation angle. | - |
dc.format.extent | 6 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | eng |
dc.publisher | American Institute of Physics | - |
dc.relation.isformatof | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.363332 | - |
dc.relation.ispartof | Journal of Applied Physics, 1996, vol. 80, núm. 7, p. 3798-3803 | - |
dc.relation.uri | http://dx.doi.org/10.1063/1.363332 | - |
dc.rights | (c) American Institute of Physics, 1996 | - |
dc.source | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | - |
dc.subject.classification | Superfícies (Física) | cat |
dc.subject.classification | Interfícies (Ciències físiques) | cat |
dc.subject.classification | Pel·lícules fines | cat |
dc.subject.other | Surfaces (Physics) | eng |
dc.subject.other | Interfaces (Physical sciences) | eng |
dc.subject.other | Thin films | eng |
dc.title | Competitive evolution of the fine contrast modulation and CuPt ordering in InGaP/GaAs layers | eng |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/publishedVersion | - |
dc.identifier.idgrec | 194212 | - |
dc.date.updated | 2012-04-20T11:15:15Z | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
Files in This Item:
File | Description | Size | Format | |
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194212.pdf | 715.48 kB | Adobe PDF | View/Open |
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