Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24810
Title: Self-interference of charge carriers in ferromagnetic SrRuO3
Author: Herranz Casabona, Gervasi
Sánchez Barrera, Florencio
Martínez Perea, Benjamin
Fontcuberta i Griñó, Josep
García-Cuenca Varona, María Victoria
Ferrater Martorell, Cèsar
Varela Fernández, Manuel, 1956-
Keywords: Ferromagnetisme
Conductivitat elèctrica
Pel·lícules fines
Ferromagnetism
Electric conductivity
Thin films
Issue Date: 1-Jun-2004
Publisher: American Institute of Physics
Abstract: We report a systematic study of the low-temperature electrical conductivity in a series of SrRuO3 epitaxial thin films. At relatively high temperature the films display the conventional metallic behavior. However, a well-defined resistivity minimum appears at low temperature. This temperature dependence can be well described in a weak localization scenario: the resistivity minimum arising from the competition of electronic self-interference effects and the normal metallic character. By appropriate selection of the film growth conditions, we have been able to modify the mean-free path of itinerant carriers and thus to tune the relative strength of the quantum effects. We show that data can be quantitatively described by available theoretical models.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.1682785
It is part of: Journal of Applied Physics, 2004, vol. 95, p. 7213-7215
Related resource: http://dx.doi.org/10.1063/1.1682785
URI: http://hdl.handle.net/2445/24810
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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