Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24823
Title: Gas collisions and pressure quenching of the photoluminescence of silicon nanopowder grown by plasma-enhanced chemical vapor deposition
Author: Roura Grabulosa, Pere
Costa i Balanzat, Josep
Morante i Lleonart, Joan Ramon
Bertrán Serra, Enric
Keywords: Propietats òptiques
Matèria condensada
Optical properties
Condensed matter
Issue Date: 1-Apr-1997
Publisher: American Institute of Physics
Abstract: The quenching of the photoluminescence of Si nanopowder grown by plasma-enhanced chemical vapor deposition due to pressure was measured for various gases ( H2, O2, N2, He, Ne, Ar, and Kr) and at different temperatures. The characteristic pressure, P0, of the general dependence I(P) = I0¿exp(¿P/P0) is gas and temperature dependent. However, when the number of gas collisions is taken as the variable instead of pressure, then the quenching is the same within a gas family (mono- or diatomic) and it is temperature independent. So it is concluded that the effect depends on the number of gas collisions irrespective of the nature of the gas or its temperature.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.364312
It is part of: Journal of Applied Physics, 1997, vol. 81, núm. 7, p. 3290-3293
Related resource: http://dx.doi.org/10.1063/1.364312
URI: http://hdl.handle.net/2445/24823
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)
Articles publicats en revistes (Física Aplicada)

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