Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24864
Title: Size dependence of refractive index of Si nanoclusters embedded in SiO2
Author: Moreno Pastor, José Antonio
Garrido Fernández, Blas
Pellegrino, Paolo
García Favrot, Cristina
Arbiol i Cobos, Jordi
Morante i Lleonart, Joan Ramon
Marie, P.
Gourbilleau, Fabrice
Rizk, Richard
Keywords: Propietats òptiques
Matèria condensada
Espectroscòpia
Cristal·lografia
Optical properties
Condensed matter
Spectrum analysis
Crystallography
Issue Date: 8-Jul-2005
Publisher: American Institute of Physics
Abstract: he complex refractive index of SiO2 layers containing Si nanoclusters (Si-nc) has been measured by spectroscopic ellipsometry in the range from 1.5 to 5.0 eV. It has been correlated with the amount of Si excess accurately measured by x-ray photoelectron spectroscopy and the nanocluster size determined by energy-filtered transmission electron microscopy. The Si-nc embedded in SiO2 have been produced by a fourfold Si+ ion implantation, providing uniform Si excess aimed at a reliable ellipsometric modeling. The complex refractive index of the Si-nc phase has been calculated by the application of the Bruggeman effective-medium approximation to the composite media. The characteristic resonances of the refractive index and extinction coefficient of bulk Si vanish out in Si-nc. In agreement with theoretical simulations, a significant reduction of the refractive index of Si-nc is observed, in comparison with bulk and amorphous silicon. The knowledge of the optical properties of these composite layers is crucial for the realization of Si-based waveguides and light-emitting devices.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.1943512
It is part of: Journal of Applied Physics, 2005, vol. 98, núm. 1, p. 013523-013526
Related resource: http://dx.doi.org/10.1063/1.1943512
URI: http://hdl.handle.net/2445/24864
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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