Please use this identifier to cite or link to this item:
http://hdl.handle.net/2445/24883
Title: | Conduction mechanisms and charge storage in Si-nanocrystals metal-oxide-semiconductor memory devices studied with conducting atomic force microscopy |
Author: | Porti i Pujal, Marc Avidano, M. Nafría i Maqueda, Montserrat Aymerich Humet, Xavier Carreras, Josep Garrido Fernández, Blas |
Keywords: | Propietats magnètiques Microelectrònica Estructura electrònica Superfícies (Física) Interfícies (Ciències físiques) Pel·lícules fines Magnetic properties Microelectronics Electronic structure Surfaces (Physics) Interfaces (Physical sciences) Thin films |
Issue Date: | 2-Sep-2005 |
Publisher: | American Institute of Physics |
Abstract: | In this work, we demonstrate that conductive atomic force microscopy (C-AFM) is a very powerful tool to investigate, at the nanoscale, metal-oxide-semiconductor structures with silicon nanocrystals (Si-nc) embedded in the gate oxide as memory devices. The high lateral resolution of this technique allows us to study extremely small areas ( ~ 300nm2) and, therefore, the electrical properties of a reduced number of Si-nc. C-AFM experiments have demonstrated that Si-nc enhance the gate oxide electrical conduction due to trap-assisted tunneling. On the other hand, Si-nc can act as trapping centers. The amount of charge stored in Si-nc has been estimated through the change induced in the barrier height measured from the I-V characteristics. The results show that only ~ 20% of the Si-nc are charged, demonstrating that the electrical behavior at the nanoscale is consistent with the macroscopic characterization. |
Note: | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.2010626 |
It is part of: | Journal of Applied Physics, 2005, vol. 98, p. 056101-056103 |
URI: | http://hdl.handle.net/2445/24883 |
Related resource: | http://dx.doi.org/10.1063/1.2010626 |
ISSN: | 0021-8979 |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
539649.pdf | 142.26 kB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.