Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24885
Title: The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire
Author: Pastor Pastor, David
Cuscó i Cornet, Ramon
Artús i Surroca, Lluís
Iborra, Enrique
Jiménez, J.
Peiró Martínez, Francisca
González Díaz, Germán
Calleja Pardo, Enrique
Keywords: Ciència dels materials
Cristal·lografia
Materials science
Crystallography
Issue Date: 21-Aug-2006
Publisher: American Institute of Physics
Abstract: We have studied the effects of rapid thermal annealing at 1300¿°C on GaN epilayers grown on AlN buffered Si(111) and on sapphire substrates. After annealing, the epilayers grown on Si display visible alterations with craterlike morphology scattered over the surface. The annealed GaN/Si layers were characterized by a range of experimental techniques: scanning electron microscopy, optical confocal imaging, energy dispersive x-ray microanalysis, Raman scattering, and cathodoluminescence. A substantial Si migration to the GaN epilayer was observed in the crater regions, where decomposition of GaN and formation of Si3N4 crystallites as well as metallic Ga droplets and Si nanocrystals have occurred. The average diameter of the Si nanocrystals was estimated from Raman scattering to be around 3¿nm. Such annealing effects, which are not observed in GaN grown on sapphire, are a significant issue for applications of GaN grown on Si(111) substrates when subsequent high-temperature processing is required.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.2259817
It is part of: Journal of Applied Physics, 2006, vol. 100, núm. 4, p. 43508-1-43508-5
Related resource: http://dx.doi.org/10.1063/1.2259817
URI: http://hdl.handle.net/2445/24885
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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