Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/28443
Title: Silicon nanocluster sensitization of erbium ions under low-energy optical excitation
Author: Prtljaga, Nikola
Navarro Urrios, Daniel
Pitanti, Alessandro
Ferrarese Lupi, Federico
Garrido Fernández, Blas
Pavesi, Lorenzo
Keywords: Fotònica
Silici
Nanocristalls
Photonics
Silicon
Nanocrystals
Issue Date: 10-May-2012
Publisher: American Institute of Physics
Abstract: The sensitizing action of amorphous silicon nanoclusters on erbium ions in thin silica films has been studied under low-energy (long wavelength) optical excitation. Profound differences in fast visible and infrared emission dynamics have been found with respect to the high-energy (short wavelength) case. These findings point out to a strong dependence of the energy transfer process on the optical excitation energy. Total inhibition of energy transfer to erbium states higher than the first excited state (4I13/2) has been demonstrated for excitation energy below 1.82 eV (excitation wavelength longer than 680 nm). Direct excitation of erbium ions to the first excited state (4I13/2) has been confirmed to be the dominant energy transfer mechanism over the whole spectral range of optical excitation used (540 nm¿680 nm).
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.4712626
It is part of: Journal of Applied Physics, 2012, vol. 111, núm. 9, p. 094314
Related resource: http://dx.doi.org/10.1063/1.4712626
URI: http://hdl.handle.net/2445/28443
ISSN: 0021-8979
Appears in Collections:Publicacions de projectes de recerca finançats per la UE
Articles publicats en revistes (Electrònica)

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