Alloy inhomogeneities in InAlAs strained layers grown by MBE

Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/32219

Title:	Alloy inhomogeneities in InAlAs strained layers grown by MBE
Authors:	Peiró Martínez, Francisca Cornet i Calveras, Albert Morante i Lleonart, Joan Ramon Clark, S. A. Williams, R. H.
Matèria:	Microscòpia electrònica Pel·lícules fines Feixos moleculars Electron microscopy Thin films Molecular beams
Issue Date:	1992
Publisher:	American Institute of Physics
Abstract:	Transmission electron microscopy studies have been performed to characterize InxAl1−xAs layers grown by molecular beam epitaxy on (100) InP substrates. The first observations of compositional nonuniformities in strained InAlAs layers are reported. The coarse quasiperiodic structure present in each sample has been found to be dependent upon the growth parameters and the sample characteristics.
Nota:	Reproducció del document publicat a: http://dx.doi.org/10.1063/1.351083
És part de:	Journal of Applied Physics, 1992, vol. 71, num. 5, p. 2470-2472
URI:	http://hdl.handle.net/2445/32219
DOI:	http://dx.doi.org/10.1063/1.351083
ISSN:	0021-8979
Appears in Collections:	Articles publicats en revistes (Electrònica)

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