Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/32219
Title: Alloy inhomogeneities in InAlAs strained layers grown by MBE
Author: Peiró Martínez, Francisca
Cornet i Calveras, Albert
Morante i Lleonart, Joan Ramon
Clark, S. A.
Williams, R. H.
Keywords: Microscòpia electrònica
Pel·lícules fines
Feixos moleculars
Electron microscopy
Thin films
Molecular beams
Issue Date: 1992
Publisher: American Institute of Physics
Abstract: Transmission electron microscopy studies have been performed to characterize InxAl1−xAs layers grown by molecular beam epitaxy on (100) InP substrates. The first observations of compositional nonuniformities in strained InAlAs layers are reported. The coarse quasiperiodic structure present in each sample has been found to be dependent upon the growth parameters and the sample characteristics.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.351083
It is part of: Journal of Applied Physics, 1992, vol. 71, num. 5, p. 2470-2472
Related resource: http://dx.doi.org/10.1063/1.351083
URI: http://hdl.handle.net/2445/32219
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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