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Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/32232
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dc.contributor.authorGarcía-Cuenca Varona, María Victoria-
dc.contributor.authorMorenza Gil, José Luis-
dc.contributor.authorCodina i Vidal, Josep Ma. (Josep Maria), 1927--
dc.date.accessioned2012-10-09T08:52:04Z-
dc.date.available2012-10-09T08:52:04Z-
dc.date.issued1985-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/2445/32232-
dc.description.abstractSome problems involved in the interpretation of Hall‐effect measurements in polycrystalline semiconductors have not been resolved, especially when the contribution of the boundaries is appreciable. Using the Herring theory of transport properties in inhomogeneous semiconductors, we present an alternative interpretation to that previously proposed. This model permits the calculation of the Hall coefficient under general conditions.-
dc.format.extent3 p.-
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherAmerican Institute of Physics-
dc.relation.isformatofReproducció del document publicat a: http://dx.doi.org/10.1063/1.336313-
dc.relation.ispartofJournal of Applied Physics, 1985, vol. 58, num. 2, p. 1080-1082-
dc.relation.urihttp://dx.doi.org/10.1063/1.336313-
dc.rights(c) American Institute of Physics , 1985-
dc.sourceArticles publicats en revistes (Física Aplicada)-
dc.subject.classificationSemiconductors-
dc.subject.classificationEfecte Hall-
dc.subject.otherSemiconductors-
dc.subject.otherHall effect-
dc.titleOn the Hall effect in polycrystalline semiconductors-
dc.typeinfo:eu-repo/semantics/article-
dc.typeinfo:eu-repo/semantics/publishedVersion-
dc.identifier.idgrec005675-
dc.date.updated2012-10-09T08:52:04Z-
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess-
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