Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/32235
Title: Effect of substrate temperature on deposition rate of rf plasma-deposited hydrogenated amorphous silicon thin films
Author: Andújar Bella, José Luis
Bertran Serra, Enric
Canillas i Biosca, Adolf
Campmany i Guillot, Josep, 1966-
Morenza Gil, José Luis
Keywords: Pel·lícules fines
Silici
Semiconductors amorfs
Thin films
Silicon
Amorphous semiconductors
Issue Date: 1991
Publisher: American Institute of Physics
Abstract: We present a study about the influence of substrate temperature on deposition rate of hydrogenated amorphous silicon thin films prepared by rf glow discharge decomposition of pure silane gas in a capacitively coupled plasma reactor. Two different behaviors are observed depending on deposition pressure conditions. At high pressure (30 Pa) the influence of substrate temperature on deposition rate is mainly through a modification of gas density, in such a way that the substrate temperature of deposition rate is similar to pressure dependence at constant temperature. On the contrary, at low pressure (3 Pa), a gas density effect cannot account for the observed increase of deposition rate as substrate temperature rises above 450 K with an activation energy of 1.1 kcal/mole. In accordance with laser‐induced fluorescence measurements reported in the literature, this rise has been ascribed to an increase of secondary electron emission from the growing film surface as a result of molecular hydrogen desorption.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.348470
It is part of: Journal of Applied Physics, 1991, vol. 69, num. 6, p. 3757-3759
Related resource: http://dx.doi.org/10.1063/1.348470
URI: http://hdl.handle.net/2445/32235
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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