Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/32236
Title: Properties of amorphous silicon thin films grown in square wave modulated silane rf discharges.
Author: Andújar Bella, José Luis
Bertran Serra, Enric
Canillas i Biosca, Adolf
Campmany i Guillot, Josep, 1966-
Serra-Miralles, J.
Roch i Cunill, Carles
Lloret, A.
Keywords: Semiconductors amorfs
Pel·lícules fines
Silici
Amorphous semiconductors
Thin films
Silicon
Issue Date: 1992
Publisher: American Institute of Physics
Abstract: Hydrogenated amorphous silicon (a‐Si:H) thin films have been obtained from pure SiH4 rf discharges by using the square wave modulation (SQWM) method. Film properties have been studied by means of spectroellipsometry, thermal desorption spectrometry, photothermal deflection spectroscopy and electrical conductivity measurements, as a function of the modulation frequency of the rf power amplitude (0.2-4000 Hz). The films deposited at frequencies about 1 kHz show the best structural and optoelectronic characteristics. Based upon the experimental results, a qualitative model is presented, which points up the importance of plasma negative ions in the deposition of a‐Si:H from SQWM rf discharges through their influence on powder particle formation.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.351229
It is part of: Journal of Applied Physics, 1992, vol. 71, num. 3, p. 1546-1548
Related resource: http://dx.doi.org/10.1063/1.351229
URI: http://hdl.handle.net/2445/32236
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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