Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/32275
Title: Correlation between charge transport and electroluminescence properties of Si-rich oxide/nitride/oxide-based light emitting capacitors.
Author: Berencén Ramírez, Yonder Antonio
Ramírez Ramírez, Joan Manel
Jambois, Olivier
Domínguez, Carlos (Domínguez Horna)
Rodríguez, J. A.
Garrido Fernández, Blas
Keywords: Electrònica
Fotònica
Metall-òxid-semiconductors complementaris
Propietats elèctriques
Electronics
Photonics
Complementary metal oxide semiconductors
Electric properties
Issue Date: 14-Aug-2012
Publisher: American Institute of Physics
Abstract: The electrical and electroluminescence (EL) properties at room and high temperatures of oxide/ nitride/oxide (ONO)-based light emitting capacitors are studied. The ONO multidielectric layer is enriched with silicon by means of ion implantation. The exceeding silicon distribution follows a Gaussian profile with a maximum of 19%, centered close to the lower oxide/nitride interface. The electrical measurements performed at room and high temperatures allowed to unambiguously identify variable range hopping (VRH) as the dominant electrical conduction mechanism at low voltages, whereas at moderate and high voltages, a hybrid conduction formed by means of variable range hopping and space charge-limited current enhanced by Poole-Frenkel effect predominates. The EL spectra at different temperatures are also recorded, and the correlation between charge transport mechanisms and EL properties is discussed.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.4742054
It is part of: Journal of Applied Physics, 2012, vol. 112, num. 3, p. 033114-1-033114-5
Related resource: http://dx.doi.org/10.1063/1.4742054
URI: http://hdl.handle.net/2445/32275
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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