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http://hdl.handle.net/2445/32769
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DC Field | Value | Language |
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dc.contributor.author | Gacevic, Zarko | - |
dc.contributor.author | Fernández-Garrido, S. | - |
dc.contributor.author | Rebled, J. M. (José Manuel) | - |
dc.contributor.author | Estradé Albiol, Sònia | - |
dc.contributor.author | Peiró Martínez, Francisca | - |
dc.contributor.author | Calleja Pardo, Enrique | - |
dc.date.accessioned | 2012-11-20T15:47:34Z | - |
dc.date.available | 2012-11-20T15:47:34Z | - |
dc.date.issued | 2011 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/2445/32769 | - |
dc.description.abstract | We report on properties of high quality 60 nm thick InAlN layers nearly in-plane lattice-matched to GaN, grown on c-plane GaN-on-sapphire templates by plasma-assisted molecular beam epitaxy. Excellent crystalline quality and low surface roughness are confirmed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. High annular dark field observations reveal a periodic in-plane indium content variation (8 nm period), whereas optical measurements evidence certain residual absorption below the band-gap. The indium fluctuation is estimated to be 61.2% around the nominal 17% indium content via plasmon energy oscillations assessed by electron energy loss spectroscopy with sub-nanometric spatial resolution. | - |
dc.format.extent | 4 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | American Institute of Physics | - |
dc.relation.isformatof | Reproducció del document publicat a: https://doi.org/10.1063/1.3614434 | - |
dc.relation.ispartof | Applied Physics Letters, 2011, vol. 99, p. 031103-1-031103-3 | - |
dc.relation.uri | https://doi.org/10.1063/1.3614434 | - |
dc.rights | (c) American Institute of Physics , 2011 | - |
dc.source | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | - |
dc.subject.classification | Optoelectrònica | - |
dc.subject.classification | Semiconductors | - |
dc.subject.classification | Estructura cristal·lina (Sòlids) | - |
dc.subject.classification | Indi (Metall) | - |
dc.subject.other | Optoelectronics | - |
dc.subject.other | Semiconductors | - |
dc.subject.other | Layer structure (Solids) | - |
dc.subject.other | Indium | - |
dc.title | High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy | eng |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/publishedVersion | - |
dc.identifier.idgrec | 597577 | - |
dc.date.updated | 2012-11-20T15:47:34Z | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
Files in This Item:
File | Description | Size | Format | |
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597577.pdf | 1.38 MB | Adobe PDF | View/Open |
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