Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/34663
Title: The Electronic Structure of Co-Sputtered Zinc Indium Tin Oxide Thin Films
Author: Carreras Seguí, Paz
Gutmann, Sebastian
Antony, Aldrin
Bertomeu i Balagueró, Joan
Schlaf, Rudy
Keywords: Òxid de zinc
Estany
Òxids metàl·lics
Elèctrodes
Estructura electrònica
Propietats òptiques
Pel·lícules fines
Zinc oxide
Tin
Metallic oxides
Electrodes
Electronic structure
Optical properties
Thin films
Issue Date: 2011
Publisher: American Institute of Physics
Abstract: Zinc indium tin oxide (ZITO) transparent conductive oxide layers were deposited via radio frequency (RF) magnetron co-sputtering at room temperature. A series of samples with gradually varying zinc content was investigated. The samples were characterized with x-ray and ultraviolet photoemission spectroscopy (XPS, UPS) to determine the electronic structure of the surface. Valence and conduction bands maxima (VBM, CBM), and work function were determined. The experiments indicate that increasing Zn content results in films with a higher defect rate at the surface leading to the formation of a degenerately doped surface layer if the Zn content surpasses 50%. Furthermore, the experiments demonstrate that ZITO is susceptible to ultraviolet light induced work function reduction, similar to what was earlier observed on ITO and TiO2 films.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.3647780
It is part of: Journal of Applied Physics, 2011, vol. 110, num. 7, p. 073711-1-073711-7
Related resource: http://dx.doi.org/10.1063/1.3647780
URI: http://hdl.handle.net/2445/34663
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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