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Title: | The Electronic Structure of Co-Sputtered Zinc Indium Tin Oxide Thin Films |
Author: | Carreras Seguí, Paz Gutmann, Sebastian Antony, Aldrin Bertomeu i Balagueró, Joan Schlaf, Rudy |
Keywords: | Òxid de zinc Estany Òxids metàl·lics Elèctrodes Estructura electrònica Propietats òptiques Pel·lícules fines Zinc oxide Tin Metallic oxides Electrodes Electronic structure Optical properties Thin films |
Issue Date: | 2011 |
Publisher: | American Institute of Physics |
Abstract: | Zinc indium tin oxide (ZITO) transparent conductive oxide layers were deposited via radio frequency (RF) magnetron co-sputtering at room temperature. A series of samples with gradually varying zinc content was investigated. The samples were characterized with x-ray and ultraviolet photoemission spectroscopy (XPS, UPS) to determine the electronic structure of the surface. Valence and conduction bands maxima (VBM, CBM), and work function were determined. The experiments indicate that increasing Zn content results in films with a higher defect rate at the surface leading to the formation of a degenerately doped surface layer if the Zn content surpasses 50%. Furthermore, the experiments demonstrate that ZITO is susceptible to ultraviolet light induced work function reduction, similar to what was earlier observed on ITO and TiO2 films. |
Note: | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.3647780 |
It is part of: | Journal of Applied Physics, 2011, vol. 110, num. 7, p. 073711-1-073711-7 |
URI: | http://hdl.handle.net/2445/34663 |
Related resource: | http://dx.doi.org/10.1063/1.3647780 |
ISSN: | 0021-8979 |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
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