Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/47286
Title: Microdoping compensation of microcrystalline silicon obtained by Hot-Wire Chemical Vapour Deposition
Author: Voz Sánchez, Cristóbal
Peiró, D.
Fonrodona Turon, Marta
Soler Vilamitjana, David
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
Keywords: Silici
Nanocristalls
Deposició química en fase vapor
Cèl·lules solars
Silicon
Nanocrystals
Chemical vapor deposition
Solar cells
Issue Date: 2000
Publisher: Elsevier B.V.
Abstract: Undoped hydrogenated microcrystalline silicon was obtained by hot-wire chemical vapour deposition at different silane-to-hydrogen ratios and low temperature (<300 °C). As well as technological aspects of the deposition process, we report structural, optical and electrical characterizations of the samples that were used as the active layer for preliminary p-i-n solar cells. Raman spectroscopy indicates that changing the hydrogen dilution can vary the crystalline fraction. From electrical measurements an unwanted n-type character is deduced for this undoped material. This effect could be due to a contaminant, probably oxygen, which is also observed in capacitance-voltage measurements on Schottky structures. The negative effect of contaminants on the device was dramatic and a compensated p-i-n structure was also deposited to enhance the cell performance.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0927-0248(00)00030-1
It is part of: Solar Energy Materials and Solar Cells, 2000, vol. 63, num. 3, p. 237-246
Related resource: http://dx.doi.org/10.1016/S0927-0248(00)00030-1
URI: http://hdl.handle.net/2445/47286
ISSN: 0927-0248
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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