Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/47298
Title: Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate
Author: Fonrodona Turon, Marta
Soler Vilamitjana, David
Escarré i Palou, Jordi
Villar, Fernando
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
Saboundji, A.
Coulon, N.
Mohammed-Brahim, T.
Keywords: Transistors
Pel·lícules fines
Silici
Nanocristalls
Deposició química en fase vapor
Transistors
Thin films
Silicon
Nanocrystals
Chemical vapor deposition
Issue Date: 2006
Publisher: Elsevier B.V.
Abstract: Amorphous and nanocrystalline silicon films obtained by Hot-Wire Chemical Vapor Deposition have been incorporated as active layers in n-type coplanar top gate thin film transistors deposited on glass substrates covered with SiO 2. Amorphous silicon devices exhibited mobility values of 1.3 cm 2 V - 1 s - 1, which are very high taking into account the amorphous nature of the material. Nanocrystalline transistors presented mobility values as high as 11.5 cm 2 V - 1 s - 1 and resulted in low threshold voltage shift (∼ 0.5 V).
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.tsf.2005.07.217
It is part of: Thin Solid Films, 2006, vol. 501, num. 1-2, p. 303-306
Related resource: http://dx.doi.org/10.1016/j.tsf.2005.07.217
URI: http://hdl.handle.net/2445/47298
ISSN: 0040-6090
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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