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Title: Top-gate microcrystalline silicon TFTs processed at low temperature (<200ºC)
Author: Saboundji, A.
Coulon, N.
Gorin, A.
Lhermite, H.
Mohammed-Brahim, T.
Fonrodona Turon, Marta
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
Keywords: Transistors
Temperatures baixes
Low temperatures
Issue Date: 2005
Publisher: Elsevier B.V.
Abstract: N-type as well P-type top-gate microcrystalline silicon thin film transistors (TFTs) are fabricated on glass substrates at a maximum temperature of 200 °C. The active layer is an undoped μc-Si film, 200 nm thick, deposited by Hot-Wire Chemical Vapor. The drain and source regions are highly phosphorus (N-type TFTs) or boron (P-type TFTs)-doped μc-films deposited by HW-CVD. The gate insulator is a silicon dioxide film deposited by RF sputtering. Al-SiO 2-N type c-Si structures using this insulator present low flat-band voltage,-0.2 V, and low density of states at the interface D it=6.4×10 10 eV -1 cm -2. High field effect mobility, 25 cm 2/V s for electrons and 1.1 cm 2/V s for holes, is obtained. These values are very high, particularly the hole mobility that was never reached previously.
Note: Versió postprint del document publicat a:
It is part of: Thin Solid Films, 2005, vol. 487, num. 1-2, p. 227-231
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ISSN: 0040-6090
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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