Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/47504
Title: On the determination of the interface density of states in a-Si:H/a-SiC:H multilayers
Author: Bertomeu i Balagueró, Joan
Puigdollers i González, Joaquim
Asensi López, José Miguel
Andreu i Batallé, Jordi
Keywords: Semiconductors amorfs
Optoelectrònica
Espectroscòpia
Silici
Semimetalls
Amorphous semiconductors
Optoelectronics
Spectrum analysis
Silicon
Semimetals
Issue Date: 1993
Publisher: Elsevier B.V.
Abstract: This paper deals with the determination of the interface density of states in amorphous silicon-based multilayers. Photothermal deflection spectroscopy is used to characterize two series of aSi:H/aSi1-xCx:H multilayers, and a new approach in the treatment of experimental dada is used in order to obtain accurate results. From this approach, an upper limit of 10^10 cm-2 is determined for the interface density of states.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/0022-3093(93)91133-N
It is part of: Journal of non-Crystalline Solids, 1993, vol. 164-166, num. 2, p. 861-864
Related resource: http://dx.doi.org/10.1016/0022-3093(93)91133-N
URI: http://hdl.handle.net/2445/47504
ISSN: 0022-3093
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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