Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/50485
Title: Resistance Switching in Transparent Magnetic MgO Films
Author: Jambois, Olivier
Carreras Seguí, Paz
Antony, Aldrin
Bertomeu i Balagueró, Joan
Martínez Boubeta, José Carlos
Keywords: Òxid de magnesi
Pel·lícules fines
Espintrònica
Ferromagnetisme
Matèria condensada
Magnesium oxide
Thin films
Spintronics
Ferromagnetism
Condensed matter
Issue Date: 2011
Publisher: Elsevier Ltd
Abstract: We have studied the abrupt and hysteretic changes of resistance in MgO-based capacitor devices. The switching behavior is discussed in terms of the formation and rupture of conduction filaments due to the migration of structural defects in the electric field, together with the redox events which affects the mobile carriers. The results presented in this paper suggest that MgO transparent films combining ferromagnetism and multilevel switching characteristics might pave the way for a new method for spintronic multibit data storage.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.ssc.2011.10.009
It is part of: Solid State Communications, 2011, vol. 151, num. 24, p. 1856-1859
Related resource: http://dx.doi.org/10.1016/j.ssc.2011.10.009
URI: http://hdl.handle.net/2445/50485
ISSN: 0038-1098
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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