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| Issue Date | Title | Author(s) |
|---|---|---|
| 1-Jul-1997 | Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers | Roura Grabulosa, Pere; Vilà i Arbonès, Anna Maria; Bosch Estrada, José; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Westwood, David I. |
| 15-May-1995 | Partial and perfect dislocation nucleation at the onset of stress relaxation in In0.60Ga0.40As active layers of high mobility transistors grown on InP | Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon |
| 1992 | Composition modulation and inhomogeneous strain field in InxGa1-xAs/InP strained layers | Roura Grabulosa, Pere; Bosch Estrada, José; Morante i Lleonart, Joan Ramon |
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