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|Title:||Nanocrystalline silicon thin films on PEN substrates|
Escarré i Palou, Jordi
Rojas Tarazona, Fredy E.
Asensi López, José Miguel
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
|Abstract:||We study the structural and electrical properties of intrinsic layer growth close to the transition between amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H), deposited on glass and PEN without intentional heating. These samples showed different behaviour in Raman shift and XRD spectra when compared with that of samples deposited at 200 °C. Electrical properties of these films also reflect the transition between a-Si:H and nc-Si:H, and put in evidence some differences between the microstructure of the films grown on PEN and on glass. P- and n-doped layers were deposited onto glass substrate without intentional heating and at 100 °C with thicknesses ranging from 1000 nm to 35 nm. Conductivity measurements indicate the capability of doping this material, but, for very thin layers, substrate heating was found to be essential.|
|Note:||Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.tsf.2007.06.196|
|It is part of:||Thin Solid Films, 2007, vol. 516, num. 5, p. 584-587|
|Appears in Collections:||Articles publicats en revistes (Física Aplicada)|
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