Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/98100
Title: Nanocrystalline silicon thin films on PEN substrates
Author: Villar, Fernando
Escarré i Palou, Jordi
Antony, Aldrin
Stella, Marco
Rojas Tarazona, Fredy E.
Asensi López, José Miguel
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
Keywords: Cèl·lules solars
Silici
Solar cells
Silicon
Issue Date: 11-Jun-2007
Publisher: Elsevier B.V.
Abstract: We study the structural and electrical properties of intrinsic layer growth close to the transition between amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H), deposited on glass and PEN without intentional heating. These samples showed different behaviour in Raman shift and XRD spectra when compared with that of samples deposited at 200 °C. Electrical properties of these films also reflect the transition between a-Si:H and nc-Si:H, and put in evidence some differences between the microstructure of the films grown on PEN and on glass. P- and n-doped layers were deposited onto glass substrate without intentional heating and at 100 °C with thicknesses ranging from 1000 nm to 35 nm. Conductivity measurements indicate the capability of doping this material, but, for very thin layers, substrate heating was found to be essential.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.tsf.2007.06.196
It is part of: Thin Solid Films, 2007, vol. 516, num. 5, p. 584-587
Related resource: http://dx.doi.org/10.1016/j.tsf.2007.06.196
URI: http://hdl.handle.net/2445/98100
ISSN: 0040-6090
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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