Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/98399
Title: Kelvin probe measurements of microcrystalline silicon on a nanometer scale using SFM
Author: Breymesser, A.
Schlosser, V.
Peiró, D.
Voz Sánchez, Cristóbal
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
Summhammer, J.
Keywords: Silici
Deposició química en fase vapor
Cèl·lules solars
Silicon
Chemical vapor deposition
Solar cells
Issue Date: 2001
Publisher: Elsevier B.V.
Abstract: Work function measurements on cross-sectioned microcrystalline pin silicon solar cells deposited by Hot-Wire CVD are presented. The experiment is realized by combining a modified Kelvin probe experiment and a scanning force microscope. The measured surface potential revealed that the built-in electric drift field is weak in the middle of the compensated intrinsic layer. A graded donor distribution and a constant boron compensation have to be assumed within the intrinsic layer in order to obtain coincidence of the measurements and simulations. The microcrystalline p-silicon layer and the n-type transparent conducting oxide form a reverse polarized diode in series with the pin diode.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0927-0248(00)00170-7
It is part of: Solar Energy Materials and Solar Cells, 2001, vol. 66, num. 1-4, p. 171-177
Related resource: http://dx.doi.org/10.1016/S0927-0248(00)00170-7
URI: http://hdl.handle.net/2445/98399
ISSN: 0927-0248
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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