Please use this identifier to cite or link to this item:
http://hdl.handle.net/2445/10914
Title: | Chaos in resonant-tunneling superlattices |
Author: | Bulashenko, Oleg Bonilla, L. L. (Luis López), 1956- |
Keywords: | Semiconductors Dinàmica de fluids Efecte túnel Semiconductors Fluid dynamics Tunneling (Physics) |
Issue Date: | 1995 |
Publisher: | The American Physical Society |
Abstract: | Spatiotemporal chaos is predicted to occur in n-doped semiconductor superlattices with sequential resonant tunneling as their main charge transport mechanism. Under dc voltage bias, undamped time-dependent oscillations of the current (due to the motion and recycling of electric field domain walls) have been observed in recent experiments. Chaos is the result of forcing this natural oscillation by means of an appropriate external microwave signal. |
Note: | Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.52.7849 |
It is part of: | Physical Review B, 1995, vol. 52, núm. 11, p. 7849-7852 |
URI: | http://hdl.handle.net/2445/10914 |
Related resource: | http://dx.doi.org/10.1103/PhysRevB.52.7849 |
ISSN: | 0163-1829 |
Appears in Collections: | Articles publicats en revistes (Física de la Matèria Condensada) |
Files in This Item:
File | Description | Size | Format | |
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517061.pdf | 677.2 kB | Adobe PDF | View/Open |
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