Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/160757
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dc.contributor.authorFrieiro Castro, Juan Luis-
dc.contributor.authorBlázquez, O. (Oriol)-
dc.contributor.authorLópez Vidrier, Julià-
dc.contributor.authorLópez Conesa, Lluís-
dc.contributor.authorEstradé Albiol, Sònia-
dc.contributor.authorPeiró Martínez, Francisca-
dc.contributor.authorIbáñez i Insa, Jordi-
dc.contributor.authorHernández Márquez, Sergi-
dc.contributor.authorGarrido Fernández, Blas-
dc.date.accessioned2020-05-16T18:06:33Z-
dc.date.available2020-05-16T18:06:33Z-
dc.date.issued2017-10-18-
dc.identifier.issn1862-6300-
dc.identifier.urihttp://hdl.handle.net/2445/160757-
dc.description.abstractIn this work, the fabrication and the structural, optical and electrical properties of Al-Tb/SiO2 nanomultilayers have been studied. The nanomultilayers were deposited by means of electron beam evaporation on top of p-type Si substrates. Optical characterization shows a narrow and strong emission in the green spectral range, indicating the optical activation of Tb3+ ions. The electrical characteriza-tion revealed conduction limited by the electrode, although trapped-assisted mechanisms can also contribute to transport. The electroluminescence analysis revealed also emission from Tb3+ ions, yielded promising results to in-clude this material in future optoelectronics applications as integrated emitting devices.-
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherWiley-VCH-
dc.relation.isformatofVersió postprint del document publicat a: https://doi.org/10.1002/pssa.201700451-
dc.relation.ispartofphysica status solidi (a), 2017, vol. 215, num. 1700451-
dc.relation.urihttps://doi.org/10.1002/pssa.201700451-
dc.rights(c) Wiley-VCH, 2017-
dc.sourceArticles publicats en revistes (Enginyeria Electrònica i Biomèdica)-
dc.subject.classificationMetall-òxid-semiconductors-
dc.subject.classificationLuminescència-
dc.subject.classificationOptoelectrònica-
dc.subject.otherMetal oxide semiconductors-
dc.subject.otherLuminescence-
dc.subject.otherOptoelectronics-
dc.titleGreen electroluminescence of Al/Tb/Al/SiO2 devices fabricated by electron beam evaporation-
dc.typeinfo:eu-repo/semantics/article-
dc.typeinfo:eu-repo/semantics/acceptedVersion-
dc.identifier.idgrec674106-
dc.date.updated2020-05-16T18:06:34Z-
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess-
Appears in Collections:Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

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