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https://hdl.handle.net/2445/160757
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DC Field | Value | Language |
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dc.contributor.author | Frieiro Castro, Juan Luis | - |
dc.contributor.author | Blázquez Gómez, Josep Oriol | - |
dc.contributor.author | López Vidrier, Julià | - |
dc.contributor.author | López Conesa, Lluís | - |
dc.contributor.author | Estradé Albiol, Sònia | - |
dc.contributor.author | Peiró Martínez, Francisca | - |
dc.contributor.author | Ibáñez i Insa, Jordi | - |
dc.contributor.author | Hernández Márquez, Sergi | - |
dc.contributor.author | Garrido Fernández, Blas | - |
dc.date.accessioned | 2020-05-16T18:06:33Z | - |
dc.date.available | 2020-05-16T18:06:33Z | - |
dc.date.issued | 2017-10-18 | - |
dc.identifier.issn | 1862-6300 | - |
dc.identifier.uri | https://hdl.handle.net/2445/160757 | - |
dc.description.abstract | In this work, the fabrication and the structural, optical and electrical properties of Al-Tb/SiO2 nanomultilayers have been studied. The nanomultilayers were deposited by means of electron beam evaporation on top of p-type Si substrates. Optical characterization shows a narrow and strong emission in the green spectral range, indicating the optical activation of Tb3+ ions. The electrical characteriza-tion revealed conduction limited by the electrode, although trapped-assisted mechanisms can also contribute to transport. The electroluminescence analysis revealed also emission from Tb3+ ions, yielded promising results to in-clude this material in future optoelectronics applications as integrated emitting devices. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | Wiley-VCH | - |
dc.relation.isformatof | Versió postprint del document publicat a: https://doi.org/10.1002/pssa.201700451 | - |
dc.relation.ispartof | physica status solidi (a), 2017, vol. 215, num. 1700451 | - |
dc.relation.uri | https://doi.org/10.1002/pssa.201700451 | - |
dc.rights | (c) Wiley-VCH, 2017 | - |
dc.source | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | - |
dc.subject.classification | Metall-òxid-semiconductors | - |
dc.subject.classification | Luminescència | - |
dc.subject.classification | Optoelectrònica | - |
dc.subject.other | Metal oxide semiconductors | - |
dc.subject.other | Luminescence | - |
dc.subject.other | Optoelectronics | - |
dc.title | Green electroluminescence of Al/Tb/Al/SiO2 devices fabricated by electron beam evaporation | - |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/acceptedVersion | - |
dc.identifier.idgrec | 674106 | - |
dc.date.updated | 2020-05-16T18:06:34Z | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
Files in This Item:
File | Description | Size | Format | |
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674106.pdf | 465.61 kB | Adobe PDF | View/Open |
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