Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/174711
Title: Patterning enhanced tetragonality in BiFeO3 thin films with effective negative pressure by helium implantation
Author: Toulouse, Constance
Fischer, J.
Farokhipoor, S.
Yedra Cardona, Lluís
Carlá, Francesco
Jarnac, A.
Elkaim, E.
Fertey, P.
Audinot, J.-N.
Wirtz, Tom
Noheda, B.
Garcia, V.
Fusil, S.
Peral Alonso, I.
Guennou, M.
Kreisel, J.
Keywords: Pel·lícules fines
Heli
Thin films
Helium
Issue Date: 9-Feb-2021
Publisher: American Physical Society
Abstract: Helium implantation in epitaxial thin films is a way to control the out-of-plane deformation independentlyfrom the in-plane strain controlled by epitaxy. In particular, implantation by means of a helium microscopeallows for local implantation and patterning down to the nanometer resolution, which is of interest for deviceapplications. We present here a study of bismuth ferrite (BiFeO3) films where strain was patterned locally byhelium implantation. Our combined Raman, x-ray diffraction, and transmission electron microscopy (TEM)study shows that the implantation causes an elongation of the BiFeO3unit cell and ultimately a transition towardsthe so-called supertetragonal polymorph via states with mixed phases. In addition, TEM reveals the onset ofamorphization at a threshold dose that does not seem to impede the overall increase in tetragonality. The phasetransition from the R-like to T-like BiFeO3appears as first-order in character, with regions of phase coexistenceand abrupt changes in lattice parameters.
Note: Reproducció del document publicat a: https://doi.org/10.1103/PhysRevMaterials.5.024404
It is part of: Physical Review Materials, 2021, vol. 5, num. 2, p. 024404
URI: http://hdl.handle.net/2445/174711
Related resource: https://doi.org/10.1103/PhysRevMaterials.5.024404
ISSN: 2475-9953
Appears in Collections:Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

Files in This Item:
File Description SizeFormat 
707667.pdf3.01 MBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.